View RTPA5250-130_8404980.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

raytheon rf components 362 lowell street andover, ma 01810 revised january 25, 2002 page 1 www.raytheonrf.com characteristic performance data and specifications are subject to change without notice. product information the RTPA5250-130 is a small outline, highly integrated power amplifier and switch mmic-based module for wlan applications in the 5.15 - 5.25, 5.25 - 5.35, and 5.725 - 5.825 ghz unii (unlicensed national information infrastructure) bands. rf inputs and outputs are matched internally to 50 ohms to reduce circuit complexity. a pair of phemt switches provide additional flexibility for designers of unii band systems. the RTPA5250-130 utilizes raytheons low cost, advanced 0.5 m gate length power phemt process. low cost ltcc package (11.6 x 9.1 x 1.7mm) 38 db small signal gain (typ.) 7 db headroom for signals with high peak to average power ratio switches included for t/r and antenna diversity functions rf inputs and outputs matched to 50 ohms process tolerant active bias eliminates process variations power-down mode reduces quiescent current to 9 ma when in receive mode antenna, rcv or xmt ports are internally matched when not in operation features absolute maximum ratings description parameter symbol value unit positive amplifier supply dc voltage v dd +4.5 v negative logic control dc voltage v ee -7 v negative bias control voltage v ab -7 v drain current i dd 500 ma case operating temperature t case -40 to +85 c storage temperature range t storage -60 to +150 c electrical characteristics (at 25c) 50 ? system, vdd=+3.3 v, load vswr < 1.2 : 1 parameter min typ max unit frequency range 5150 - 5825 mhz small signal gain 38 db output power 1 16.5 dbm efficiency 1 17 % power out @ 1db comp. 2 22 dbm noise figure 5 db input vswr (50 ? ) 3 2:1 output vswr (50 ? ) 3 2:1 quiescent current (xmt) 280 ma quiescent current (rcv) 9 ma pa ramp on time 4 1 s parameter min typ max unit vdd voltage range 3.0 3.3 3.6 v vee voltage range -6 v vab voltage range -6 -4 v switch insertion loss 1.5 db switch isolation 20 25 db switch switching time 25 ns switch amplitude flatness 5170 - 5825 mhz +/-1 db switch control 0 voltage 0 0.8 v switch control 1 voltage 2.0 3.3 v notes: 1. output power and efficiency is the average value measured at ant1 or ant2 with diversity switch set to output for correspondi ng antenna. input shall be a 16qam-modulated ofdm waveform with 52 sub-carriers spaced at 312.5 khz. module output power at ant1 and ant2 includes switch insertion loss. 2. power out @ idq=320 ma 3. amplifier is unconditionally stable into all output vswrs. stated vswr is required to achieve specified performance. 4. amplifier output power and phase must settle to within 90% of final values within time specified. RTPA5250-130 3.3v unii band power amplifier mmic/switch module for wlan
raytheon rf components 362 lowell street andover, ma 01810 revised january 25, 2002 page 2 www.raytheonrf.com characteristic performance data and specifications are subject to change without notice. product information caution: this is an esd sensitive device. the following describes a procedure for evaluating the RTPA5250-130, power amplifier / switch module, in a leadless package. the package outline and the pin designations are shown in figure 1. the functional block diagram of the packaged product is provided in figure 2. it should be noted that RTPA5250-130 requires very minimal external passive components for dc bias and no external components for rf matching circuits. figure 3 shows the switch logic control table. figure 4 shows a typical layout of an evaluation board. the module contains the mmic with bias decoupling components. the following designations, shown in figure 1 should be noted: xmt pin 1 gnd pin 2, 5, 7, 9, 11,16 s1 vab pin 3 vdd pin 13 rcv pin 10 xmt/rcv control pin 14 vee pin 12 amp 50 ? s2 ant2 pin 8 ant1 pin 6 ant1/2 control pin 15 50 ? (1 v dd is the supply voltage. (2) v ee is the logic control voltage. (3) v ab is the active bias control voltage. RTPA5250-130 3.3v unii band power amplifier mmic/switch module for wlan dimensions in inches application information figure 1 package information xmt gnd vab nc gnd ant1 gnd ant2 gnd rcv gnd vee vdd xmt/rcv control ant1/2 control gnd 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 description pin # figure 2 functional block diagram
raytheon rf components 362 lowell street andover, ma 01810 revised january 25, 2002 page 3 www.raytheonrf.com characteristic performance data and specifications are subject to change without notice. product information test procedure for the evaluation board switch logic control table figure 3 test evaluation board RTPA5250-130 3.3v unii band power amplifier mmic/switch module for wlan step 1: turn off rf input power. step 2: connect the dc supply grounds to the gnd of the evaluation board. step 3: set v ab = -6v, v ee = -6v. (adjusting vab provides quiescent current control to optimize performance, not to exceed -4v) step 4: slowly apply supply voltage of +3.3 v to the board terminal v dd . step 5: using switch logic control table below set up logic for desired output. switch control 0 voltage = 0 v switch control 1 voltage= +3.3 v step 6: after the bias condition is established, rf input signal may now be applied at the appropriate frequency band and power level. step 7: follow turn-off sequence of: (i) turn down and off v dd . (ii) turn off rf input power. (iii) set v ab and v ee to 0 v. the following sequence must be followed to properly test the amplifier: ant1/2 control xmt/rcv control ant1/2 mode xmt/rcv mode 00ant1rcv 1 1 ant2 xmt 0 1 ant1 xmt 10ant2rcv xmt/rcv control vdd* vee ant1 ant2 ant1/2 control rcv vab vee* xmt vdd * voltage inverting charge pump connections
raytheon rf components 362 lowell street andover, ma 01810 revised january 25, 2002 page 4 www.raytheonrf.com characteristic performance data and specifications are subject to change without notice. product information application information precautions to avoid permanent device damage: C cleanliness: observe proper handling procedures to ensure clean devices and pcbs. devices should remain in their original packaging until component placement to ensure no contamination or damage to rf, dc & ground contact areas. C device cleaning: standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. C static sensitivity: follow esd precautions to protect against esd damage: ? a properly grounded static-dissipative surface on which to place devices. ? static-dissipative floor or mat. ? a properly grounded conductive wrist strap for each person to wear while handling devices. C general handling: handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. avoiding damaging the rf, dc, & ground contacts on the package bottom. do not apply excessive pressure to the top of the lid. C device storage: devices are supplied in heat-sealed, moisture-barrier bags. in this condition, devices are protected and require no special storage conditions. once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. solder materials & temperature profile: reflow soldering is the preferred method of smt attachment. hand soldering is not recommended. C reflow profile ? ramp-up: during this stage the solvents are evaporated from the solder paste. care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. a typical heating rate is 1- 2c/sec. ? pre-heat/soak: the soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. the recommended soak condition is: 120-150 seconds at 150c. ? reflow zone: if the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. reflow must occur prior to the flux being completely driven off. the duration of peak reflow temperature should not exceed 10 seconds. maximum soldering temperatures should be in the range 215-220c, with a maximum limit of 225c. ? cooling zone: steep thermal gradients may give rise to excessive thermal shock. however, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. figure 1 indicates the recommended soldering profile. solder joint characteristics: proper operation of this device depends on a reliable void-free attachment of the heatsink to the pwb. the solder joint should be 95% void-free and be a consistent thickness. rework considerations: rework of a device attached to a board is limited to reflow of the solder with a heat gun. the device should not be subjected to more than 225c and reflow solder in the molten state for more than 5 seconds. no more than 2 rework operations should be performed. RTPA5250-130 3.3v unii band power amplifier mmic/switch module for wlan
raytheon rf components 362 lowell street andover, ma 01810 revised january 25, 2002 page 5 www.raytheonrf.com characteristic performance data and specifications are subject to change without notice. product information figure 4 recommended solder reflow profile soak at 150 o c for 60 sec 45 sec (max) above 183 o c 1 o c/sec 183 o c 10 sec 1 o c/sec 0 20 40 60 80 100 120 140 160 180 200 220 240 0 60 120 180 240 300 time (sec) deg c RTPA5250-130 3.3v unii band power amplifier mmic/switch module for wlan
raytheon rf components 362 lowell street andover, ma 01810 revised january 25, 2002 page 6 www.raytheonrf.com characteristic performance data and specifications are subject to change without notice. product information 15.0 25.0 30.0 20.0 40.0 45.0 -6.5 gain (db), p1db (dbm) RTPA5250-130 gain and p1db vs. vab (xmt/rcv), vdd, ant1/2 = 3.3v, vee = -6v (xmt to ant2) -6.0 -5.5 -5.0 -4.5 -4.0 35.0 vab (v) gain p1db 240 280 300 260 340 360 -6.5 idd (ma) RTPA5250-130 idd vs. vab (xmt/rcv), vdd, ant1/2 = 3.3v, vee = -6v (xmt to ant2) -6.0 -5.5 -5.0 -4.5 -4.0 320 idd vab (v) RTPA5250-130 3.3v unii band power amplifier mmic/switch module for wlan the raytheon RTPA5250-130 integrated power amplifier features a patented active bias and bias shut down circuit that eliminates two classic problems in power amplifiers. while phemt designs are known to offer superior linearity, efficiency and ability to integrate switches, normal process variations normally require digital to analog convertors (dacs) to adjust device bias voltages. the RTPA5250-130 uses an on chip easy as pie (process invariant efficient) biasing circuit where the device current is held constant over manufacturing variations. the pie biasing also provides a solution for the other classic pa design problem of reducing device currents when not transmitting. the amplifier current is automatically reduced to less than 10 milliamps when the chip enters the receive mode. since the wlan is in the receive mode a high percentage of the time (like a cell phone), this is a huge current and battery saving. in practice, the externally provided negative bias, vab, offers the possibility of the user selecting a wide range of operating conditions and enables trade offs to be made between quiescent current, output power and gain. figure 5 illustrates the change in idd obtainable by changing vab. figure 6 shows the typical changes in power and gain as vab is varied from C4.50 v to C6.0 v. bias considerations for the RTPA5250-130 figure 5 figure 6
raytheon rf components 362 lowell street andover, ma 01810 revised january 25, 2002 page 7 www.raytheonrf.com characteristic performance data and specifications are subject to change without notice. product information vin - 1.8v to 5.5v r2 r1 vout - 0v to -2x vin 2.2f 1f 0.1f 0.1f pgnd gnd fb out c1+ c2+ c1- c2- shdn in RTPA5250-130 3.3v unii band power amplifier mmic/switch module for wlan for systems that do not have negative voltages available, this voltage may be generated using inexpensive off the shelf components. figure 7 shows a schematic using the maxim max868 regulated adjustable C2x inverting charge pump. a suggested layout is shown in figure 8. the negative voltage is set by the ratio of r2 to r1. as shown, this results in a voltage of C5.5 v derived from the 3.3v vdd supply. this is the recommended operating point for the RTPA5250-130 when used with the maxim 868. the maximum current obtainable from the 868 is a direct function of the positive supply voltage, in this case, 3.3v. generation of negative voltages figure 7 typical operating circuit figure 8 typical operating circuit c3 c2 c1 c4 r1 r2 u1 + + - 7 6 10 8 9 6 5
raytheon rf components 362 lowell street andover, ma 01810 revised january 25, 2002 page 8 www.raytheonrf.com characteristic performance data and specifications are subject to change without notice. product information to supply the negative supply current drawn by the rtpa5250 the most negative voltage should be limited to C5.5v . note that the limitation is in the charge pump circuitry not the RTPA5250-130. the equation for the output of the maxim 868 in terms of the input vdd is: vout=(r1 r2)xvdd in our example vdd=3.3v and r1=169k, r2=100k. a bill of materials with suggested components is shown in figure 9. qty item no. part no. description vendor 1 1 g657176-1 pc. board raytheon 4 2 j1, j2 sma connector johnson 5 3 p1 or p2 terminals samtec 1 4 g656998-1 rtpa5250 substrate raytheon 1 5 (r1) 311-169khgt-nd 169k res. (.06 x .03) digi-key 2 6 (c1, 2) grm39c0g224j16 0.220 f capacitor (.06 x .03) murata ref#grm37x7r224k16 1 7 (u1) maxb68 charge pump maxim 1 8 (c3) grm39c0g224j16 1 f capacitor (.06 x .03) murata ref# grm37x7r224k16 1 9 (c4) tpsb106k016r06000 10 f capacitor (.12 x .08) avx 1 10 (r2) 311-100htr-nd 100k res. (.06 x .03) digi-key figure 9 materials list RTPA5250-130 3.3v unii band power amplifier mmic/switch module for wlan generation of negative voltages (contd) (for additional details see the maxim max868 data sheet at www.maxim-ic.com)
raytheon rf components 362 lowell street andover, ma 01810 revised january 25, 2002 page 9 www.raytheonrf.com characteristic performance data and specifications are subject to change without notice. product information rtpa5250-78 pout vs. pin xmt/rcv, vdd, ant1/2 = 3.3v, vee = -6v 12 13 14 15 16 17 18 19 20 21 22 23 24 -25 -24 -23 -22 -21 -20 -19 -18 -17 -16 -15 -14 -13 -12 pin (dbm) pout (dbm) 5.15 ghz, -6v vab, 288 ma 5.5 ghz, -6v vab, 288 ma 5.85 ghz, -6v vab, 288 ma 5.15 ghz, -5v vab, 320 ma 5.5 ghz, -5v vab, 320 ma 5.85 ghz, -5v vab, 320 ma rtpa5250-78 gain vs. pin xmt/rcv, vdd, ant1/2 = 3.3v, vee = -6v 33 34 35 36 37 38 39 40 -25 -24 -23 -22 -21 -20 -19 -18 -17 -16 -15 -14 -13 -12 pin (dbm) gain (db) 5.15 ghz, -6v vab, 288 ma 5.5 ghz, -6v vab, 288 ma 5.85 ghz, -6v vab, 288 ma 5.15 ghz, -5v vab, 320 ma 5.5 ghz, -5v vab, 320 ma 5.85 ghz, -5v vab, 320 ma performance data evaluation board RTPA5250-130 3.3v unii band power amplifier mmic/switch module for wlan RTPA5250-130 pout vs. pin xmt/rcv, vdd, ant1/2 = 3.3v,vee = -6v RTPA5250-130 gain vs. pin xmt/rcv, vdd, ant1/2 = 3.3v,vee = -6v power/gain transmit mode
raytheon rf components 362 lowell street andover, ma 01810 revised january 25, 2002 page 10 www.raytheonrf.com characteristic performance data and specifications are subject to change without notice. product information rtpa5250-78 s11,s21, s22 vs. frequency (xmt/rcv), vdd=3.3v ant1/2=0v vee=-6v vab=-6v id=278ma (xmt to ant1) -30 -20 -10 0 10 20 30 40 50 3.5 4 4.5 5 5.5 6 6.5 7 7.5 frequency (ghz) s11, s21, s22 (db) s11db s21db s22db rtpa5250-78 s11,s21, s22 vs. frequency (xmt/rcv), vdd=3.3v ant1/2=0v vee=-6v vab=-6v id=278ma (xmt to ant1) -30 -20 -10 0 10 20 30 40 50 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 frequency (ghz) s11, s21, s22 (db) s11db s21db s22db performance data s-parameters transmit mode RTPA5250-130 3.3v unii band power amplifier mmic/switch module for wlan RTPA5250-130, s11, s21, s22 vs. frequency (xmt/rcv), vdd = 3.3v, ant1/2 = 0v , vee = -6v vab = -6v id = 278ma (xmt to ant1) RTPA5250-130, s11, s21, s22 vs. frequency (xmt/rcv), vdd = 3.3v, ant1/2 = 0v , vee = -6v vab = -6v id = 278ma (xmt to ant1)
raytheon rf components 362 lowell street andover, ma 01810 revised january 25, 2002 page 11 www.raytheonrf.com characteristic performance data and specifications are subject to change without notice. product information rtpa5250-78 s11, s21, s22 vs. frequency (xmt/rcv), vdd, (ant1/2)=3.3v vee=-6v vab=-5v id=318ma (xmt to ant2) -30 -20 -10 0 10 20 30 40 50 3.544.555.566.577.5 frequency (ghz) s11, s21, s22 (db) s11db s21db s22db rtpa5250-78 s11, s21, s22 vs. frequency (xmt/rcv), vdd, (ant1/2)=3.3v vee=-6v vab=-6v id=280ma (xmt to ant2) -30 -20 -10 0 10 20 30 40 50 3.5 4 4.5 5 5.5 6 6.5 7 7.5 frequency (ghz) s11, s21, s22 (db) s11db s21db s22db RTPA5250-130 3.3v unii band power amplifier mmic/switch module for wlan performance data s-parameters transmit mode RTPA5250-130, s11, s21, s22 vs. frequency (xmt/rcv), vdd, ant1/2 = 3.3v, vee = -6v vab = -5v id = 318ma (xmt to ant2) RTPA5250-130, s11, s21, s22 vs. frequency (xmt/rcv), vdd, (ant1/2) = 3.3v, vee = -6v vab = -6v id = 280ma (xmt to ant2)
raytheon rf components 362 lowell street andover, ma 01810 revised january 25, 2002 page 12 www.raytheonrf.com characteristic performance data and specifications are subject to change without notice. product information rtpa5250-78 s11, s21, s22 vs. frequency eval board 006 vdd=3.3 v (xmt/rcv), (ant1/2) =0v vee=-6v vab=-6v id=9.5ma (ant1 to rcv) -30 -25 -20 -15 -10 -5 0 3.5 4 4.5 5 5.5 6 6.5 7 7.5 frequency (ghz) s11, s21, s22 (db) s11db s21db s22db rtpa5250-78 s11, s21, s22 vs. frequency vdd, (ant1/2) =3.3 v (xmt/rcv)=0v vee=-6v vab=-6v id=9.5ma (ant2 to rcv) -30 -25 -20 -15 -10 -5 0 3.5 4 4.5 5 5.5 6 6.5 7 7.5 frequency (ghz) s11, s21, s22 (db) s11db s21db s22db performance data s-parameters receive mode fixture losses of 0.4 db included RTPA5250-130 3.3v unii band power amplifier mmic/switch module for wlan RTPA5250-130, s11, s21, s22 vs. frequency vdd, (ant1/2) = 3.3v, (xmt/rcv) = 0v, vee = -6v vab = -6v id = 9.5ma (ant2 to rcv) RTPA5250-130, s11, s21, s22 vs. frequency eval board 006 vdd = 3.3v, (xmt/rcv), (ant1/2) = 0v, vee = -6v vab = -6v id = 9.5ma (ant1 to rcv)
raytheon rf components 362 lowell street andover, ma 01810 revised january 25, 2002 page 13 www.raytheonrf.com characteristic performance data and specifications are subject to change without notice. product information rtpa5250-78 p1db vs frequency (xmt/rcv), vdd=3.3v ant1/2=0v vee=-6v (xmt to ant1) 21.6 21.8 22.0 22.2 22.4 22.6 22.8 23.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 frequency (ghz) p1db (dbm) idd=288ma, vab=-6v idd=320ma, vab=-5v performance data RTPA5250-130 3.3v unii band power amplifier mmic/switch module for wlan RTPA5250-130, p1db vs. frequency (xmt/rcv), vdd = 3.3v, ant1/2 = 0v vee = -6v (xmt to ant1)

▲Up To Search▲

Price & Availability of RTPA5250-130

	To Download RTPA5250-130 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .